NSDEMP11XV6T5 datasheet(2/3 Pages) ONSEMI

Part #	NSDEMP11XV6T5

Description	Common Anode Quad Array Switching Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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NSDEMP11XV6T1, NSDEMP11XV6T5

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ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Symbol

Condition

Min

Max

Unit

Reverse Voltage Leakage Current

IR

VR = 70 V

−

0.1

mAdc

Forward Voltage

VF

IF = 100 mA

−

1.2

Vdc

Reverse Breakdown Voltage

VR

IR = 100 mA

0

−

Vdc

Diode Capacitance

CD

VR = 6.0 V, f = 1.0 MHz

−

3.5

pF

Reverse Recovery Time

trr (Note 3)

IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR

−

4.0

ns

3. trr Test Circuit for NSDEMP11XV6T1 in Figure 4.

TYPICAL ELECTRICAL CHARACTERISTICS

100

0.2

0.4

VF, FORWARD VOLTAGE (VOLTS)

0.6

0.8

1.0

1.2

10

1.0

0.1

10

0

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

10

20

30

40

50

1.75

0

VR, REVERSE VOLTAGE (VOLTS)

1.5

1.25

1.0

0.75

24

6

8

Figure 1. Forward Voltage

Figure 2. Reverse Current

Figure 3. Diode Capacitance

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

TA = 85°C

TA = −40°C

TA = 25°C

A

RL

tr

tp

t

10%

90%

VR

tp = 2 ms

tr = 0.35 ns

IF

trr

t

Irr = 0.1 IR

IF = 5.0 mA

VR = 6 V

RL = 100 W

RECOVERY TIME EQUIVALENT TEST CIRCUIT

INPUT PULSE

OUTPUT PULSE

Figure 4. Reverse Recovery Time Test Circuit for the NSDEMP11XV6T1

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NSDEMP11XV6T5 Datasheet(PDF) 2 Page - ON Semiconductor

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