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NIS5101E1T1G Datasheet(PDF) 11 Page - ON Semiconductor |
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NIS5101E1T1G Datasheet(HTML) 11 Page - ON Semiconductor |
11 / 12 page NIS5101 http://onsemi.com 11 An overload condition is one in which the FET is fully enhanced and operating at it’s minimum RDSon. A short circuit condition occurs when either the load has shorted or upon turn on, as the load capacitor to the hot swap device initially looks like a short circuit. A single resistor will determine both the short circuit and overload current. For example, a 110 W resistor would result in a 1 A current limit when charging the capacitance at turn on, but once the FET is fully enhanced, it would allow the load to operate at a current up to 2.5 A. Once the 2.5 A limit is reached, any further reduction in load impedance will result in a short circuit condition and the current will be reduced to 1 amp. As with all SMART HotPlug devices, the current limit will never shut down the limiter. Only the thermal limit will stop the flow of current to the load. Once the current is stopped due to the thermal limit, it will remain off until input power is recycled for the latching version, or it will continuously retry to start again if it is the auto−retry version. The ILimit graph shown in Figure 2 was generated from the data of the ILimit characterization, the formulas for each of the curves and temperatures are shown below: RILimit ( W) = (56.55 / y)1.20; for TJ = 25C RILimit ( W) = (52.91 / y)1.22; for TJ = 120°C RILimit ( W) = (44.80 / y)1.33; for TJ = −40°C where “y” is the desired ILimit value. Main/Mirror MOSFET Current Ratio. The ratio varies with current and sense resistance. The key parameter that it is important to know is that the current sense reference voltage of the device is 50 mV. Knowing this information, it is possible to use Figure 2 on the datasheet for the current limit to calculate the ratio for any condition. For ”normal” operating condition, the overload curve would apply. If a 100 W for the ILimit resistor is used, the sense current would be 50 mV/ 100 W at the current limit level, which results in 500 mA. The drain current is 2.7 A under this condition, so the ratio is 5400:1. Same analysis can be made for “short circuit” conditions, the only difference is that the short circuit curve of Figure 2 is used to do the ratio calculations instead. There is a 5 W resistor in series with the sense cells. This has a tolerance of about 10% and should be taken into account when making the above calculations. Turn−onSurge: During the turn−on event, there is a large amount of energy dissipated due to the linear operation of the power device. The energy rating is the amount of energy that the device can absorb before the thermal limit circuit will shut the unit down. This is very important specially for the latch off device as it determines the maximum load capacitance that the device can charge before the thermal limit shuts the device down. The calculation of this is not very simple as it depends on several factors such as the input voltage (Vin), load capacitance (CL), current limit settings (ILimit) and device’s thermal transient response, therefore, it is recommended to do lab evaluations for these purposes. Figure 19 shows the device’s thermal transient response for minimum pad. 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 19. Thermal Transient Response TIME (seconds) |
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