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NE5517 Datasheet(PDF) 3 Page - ON Semiconductor |
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NE5517 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 14 page NE5517, NE5517A, AU5517 http://onsemi.com 3 NOTE: V+ of output buffers and amplifiers are internally connected. B AMP BIAS INPUT B DIODE BIAS B INPUT (+) B INPUT (−) B OUTPUT V+ (1) B BUFFER INPUT B BUFFER OUTPUT AMP BIAS INPUT DIODE BIAS INPUT (+) INPUT (−) OUTPUT V− BUFFER INPUT BUFFER OUTPUT A AA A A A A 123 45 6 7 8 16 15 14 13 12 11 10 9 − + B + − A Figure 2. Connection Diagram MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage (Note 1) VS 44 VDC or ±22 V Power Dissipation, Tamb = 25 °C (Still Air) (Note 2) NE5517N, NE5517AN NE5517D, AU5517D PD 1500 1125 mW Thermal Resistance, Junction−to−Ambient D Package N Package RqJA 140 94 °C/W Differential Input Voltage VIN ±5.0 V Diode Bias Current ID 2.0 mA Amplifier Bias Current IABC 2.0 mA Output Short-Circuit Duration ISC Indefinite Buffer Output Current (Note 3) IOUT 20 mA Operating Temperature Range NE5517N, NE5517AN AU5517T Tamb 0 °C to +70 °C −40 °C to +125 °C °C Operating Junction Temperature TJ 150 °C DC Input Voltage VDC +VS to −VS Storage Temperature Range Tstg −65 °C to +150 °C °C Lead Soldering Temperature (10 sec max) Tsld 230 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. For selections to a supply voltage above ±22 V, contact factory. 2. The following derating factors should be applied above 25 °C N package at 10.6 mW/ °C D package at 7.1 mW/ °C. 3. Buffer output current should be limited so as to not exceed package dissipation. |
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