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BYV28 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BYV28
Description  Ultra fast low-loss controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYV28 Datasheet(HTML) 3 Page - NXP Semiconductors

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1997 Nov 24
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV28 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
IFRM
repetitive peak forward current
Ttp =85 °C; see Figs 6 and 7
BYV28-50 to 400
32
A
BYV28-500 and 600
31
A
IFRM
repetitive peak forward current
Tamb =60 °C; see Figs 8 and 9
BYV28-50 to 400
17
A
BYV28-500 and 600
16
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
90
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.12
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 3.5 A; Tj =Tj max;
see Figs 13, 14 and 15
BYV28-50 to 200
−−
0.80
V
BYV28-300 and 400
−−
0.83
V
BYV28-500 and 600
−−
0.98
V
VF
forward voltage
IF = 3.5 A;
see Figs 13, 14 and 15
BYV28-50 to 200
−−
1.02
V
BYV28-300 and 400
−−
1.05
V
BYV28-500 and 600
−−
1.25
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV28-50
55
−−
V
BYV28-100
110
−−
V
BYV28-150
165
−−
V
BYV28-200
220
−−
V
BYV28-300
330
−−
V
BYV28-400
440
−−
V
BYV28-500
560
−−
V
BYV28-600
675
−−
V
IR
reverse current
VR =VRRMmax; see Fig.16
−−
5
µA
VR =VRRMmax; Tj = 165 °C;
see Fig.16
−−
150
µA
trr
reverse recovery time
when switched from
IF =0.5AtoIR =1A;
measured at IR = 0.25 A;
see Fig.22
BYV28-50 to 200
−−
25
ns
BYV28-300 to 600
−−
50
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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