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BYV27 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BYV27 Datasheet(HTML) 4 Page - NXP Semiconductors |
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1997 Nov 24 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV27 series THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 25. For more information please refer to the “General Part of associated Handbook”. trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig. 27 BYV27-50 to 200 −− 25 ns BYV27-300 to 600 −− 50 ns Cd diode capacitance f = 1 MHz; VR =0; see Figs 22, 23 and 24 BYV27-50 to 200 − 100 − pF BYV27-300 and 400 − 80 − pF BYV27-500 and 600 − 65 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1A/µs; see Fig. 26 −− 4A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI R dt -------- |
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