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BYV27 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BYV27
Description  Ultra fast low-loss controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYV27 Datasheet(HTML) 4 Page - NXP Semiconductors

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1997 Nov 24
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm, see Fig. 25.
For more information please refer to the
“General Part of associated Handbook”.
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig. 27
BYV27-50 to 200
−−
25
ns
BYV27-300 to 600
−−
50
ns
Cd
diode capacitance
f = 1 MHz; VR =0;
see Figs 22, 23 and 24
BYV27-50 to 200
100
pF
BYV27-300 and 400
80
pF
BYV27-500 and 600
65
pF
maximum slope of reverse recovery
current
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = −1A/µs;
see Fig. 26
−−
4A/
µs
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------


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