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BYV27 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYV27 Datasheet(HTML) 3 Page - NXP Semiconductors |
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1997 Nov 24 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV27 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. IFRM repetitive peak forward current Ttp =85 °C; see Figs 8, 9 and 10 BYV27-50 to 400 − 20 A BYV27-500 and 600 − 16 A IFRM repetitive peak forward current Tamb =60 °C; see Figs 11, 12 and 13 BYV27-50 to 200 − 14 A BYV27-300 and 400 − 13 A BYV27-500 and 600 − 11 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax BYV27-50 to 400 − 50 A BYV27-500 and 600 − 40 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off − 20 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig. 17 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 2 A; Tj =Tj max; see Figs 18, 19 and 20 BYV27-50 to 200 −− 0.78 V BYV27-300 and 400 −− 0.82 V BYV27-500 and 600 −− 1.00 V VF forward voltage IF =2A; see Figs 18, 19 and 20 BYV27-50 to 200 −− 0.98 V BYV27-300 and 400 −− 1.05 V BYV27-500 and 600 −− 1.25 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYV27-50 55 −− V BYV27-100 110 −− V BYV27-150 165 −− V BYV27-200 220 −− V BYV27-300 330 −− V BYV27-400 440 −− V BYV27-500 560 −− V BYV27-600 675 −− V IR reverse current VR =VRRMmax; see Fig. 21 −− 5 µA VR =VRRMmax; Tj = 165 °C; see Fig. 21 −− 150 µA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
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