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NCP5006SNT1 Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP5006SNT1 Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 24 page NCP5006 http://onsemi.com 5 ANALOG SECTION (Typical values are referenced to TA = +25°C, Min & Max values are referenced −25°C to +85°C ambient temperature, unless otherwise noted.) Rating Pin Symbol Min Typ Max Unit High Level Input Voltage Low Level Input Voltage 4 EN 1.3 − − − − 0.4 V V EN Pull Down Resistor 4 REN − 100 − k W Feedback Voltage Threshold 3 FB 185 200 225 mV Output Current Stabilization Time Delay following a DC/DC Start−up, @ Vbat = 3.60 V, L = 22 mH, Iout = 20 mA 1 Ioutdly − 100 − ms Internal Switch ON Resistor @ Tamb = +25 °C 1 QRDSON − 1.7 − W 5. The overall tolerance depends upon the accuracy of the external resistor. ESD PROTECTION The NCP5006 includes silicon devices to protect the pins against the ESD spikes voltages. To cope with the different ESD voltages developed in the applications, the built−in structures have been designed to handle "2.0 kVin Human Body Model (HBM) and "200 V in Machine Model (MM) on each pin. DC/DC OPERATION The DC/DC converter is designed to supply a constant current to the external load, the circuit being powered from a standard battery supply. Since the regulation is made by means of a current loop, the output voltage will varies depending upon the dynamic impedance presented by the load. Considering high intensity LED, the output voltage can range from a low 6.40 V (two LED in series biased with a low current), up to 21 V, the voltage compliance the chip can sustain continuously. The basic DC/DC structure is depicted in Figure 3. With a 28 V maximum rating voltage capability, the power device can accommodate high voltage source without any leakage current downgrading. POR LOGIC CONTROL TIME_OUT ZERO_CROSSING RESET GND Vdsense Q1 Vds L1 22 mH Vbat D1 GND Vs R2 xR GND R1 C2 + − GND Vref V(Ipeak) + − Vdsense Figure 3. Basic DC/DC Converter Structure 1 3 |
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