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BYT28 Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BYT28
Description  Dual rectifier diodes ultrafast
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYT28 Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Dual rectifier diodes
BYT28 series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
V
R = 300 V/ 400 V/ 500 V
• Fast switching
• Soft recovery characteristic
V
F ≤ 1.05 V
• High thermal cycling performance
• Low thermal resistance
I
O(AV) = 10 A
t
rr ≤ 60 ns
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
Dual, common cathode, ultra-fast,
PIN
DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high
1
cathode
frequency switched mode power
supplies.
2
anode
The BYT28 series is supplied in the
tab
cathode
conventional
leaded
SOT78
(TO220AB) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYT28
-300
-400
-500
V
RRM
Repetitive peak reverse voltage
-
300
400
500
V
V
R
Continuous reverse voltage
T
mb ≤ 147˚C
-
300
400
500
V
I
O(AV)
Average rectified output current square wave;
δ = 0.5;
-
10
A
(both diodes conducting)
1
T
mb ≤ 115 ˚C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
50
A
current per diode.
t = 8.3 ms
-
55
A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
per diode
-
-
4.5
K/W
heatsink
both diodes conducting
-
-
3.0
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a1
a2
13
2
12 3
tab
1 Neglecting switching and reverse current losses.
October 1998
1
Rev 1.400


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