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AD829SQ Datasheet(PDF) 4 Page - Analog Devices |
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AD829SQ Datasheet(HTML) 4 Page - Analog Devices |
4 / 16 page REV. G –4– AD829 CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD829 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V Internal Power Dissipation 2 PDIP (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W SOIC (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9 W CERDIP (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W LCC (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±V Differential Input Voltage 3 . . . . . . . . . . . . . . . . . . . . . . . ±6 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . Indefinite Storage Temperature Range (Q, E) . . . . . . . . –65 °C to +150°C Storage Temperature Range (N, R) . . . . . . . . –65 °C to +125°C Operating Temperature Range AD829J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 °C to 70°C AD829A . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 °C to +125°C AD829S . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 °C to +125°C Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300 °C NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; the functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Maximum internal power dissipation is specified so that T J does not exceed 150 °C at an ambient temperature of 25°C. Thermal characteristics: 8-lead PDIP package: θ JA = 100 °C/W (derate at 8.7 mW/°C) 8-lead CERDIP package: θ JA = 110 °C/W (derate at 8.7 mW/°C) 20-lead LCC package: θ JA = 77 °C/W 8-lead SOIC package: θ JA = 125 °C/W (derate at 6 mW/°C). 3 If the differential voltage exceeds 6 V, external series protection resistors should be added to limit the input current. METALLIZATION PHOTO Contact factory for latest dimensions. Dimensions shown in inches and (mm). 2.5 2.0 1.5 1.0 0.5 0 –55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85 95 105 115 125 AMBIENT TEMPERATURE ( C) LCC CERDIP SOIC PDIP Figure 1. Maximum Power Dissipation vs. Temperature SUBSTRATE CONNECTED TO +VS |
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