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NCV612SQ28T1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCV612SQ28T1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 11 page NCP612, NCV612 http://onsemi.com 4 ELECTRICAL CHARACTERISTICS (continued) (Vin = Vout(nom.) + 1.0 V, Venable = Vin, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless otherwise noted.) Characteristic Unit Max Typ Min Symbol Dropout Voltage (TA = −40°C to 85°C, Iout = 100 mA, Measured at Vout(nom) −3.0%) 1.5 V 1.8 V 2.5 V 2.7 V 2.8 V 3.0 V 3.1 V 3.3 V 3.7 V 5.0 V Vin−Vout − − − − − − − − − − 530 420 270 270 250 230 210 200 180 160 680 560 380 380 380 380 380 380 380 300 mV Ground Current (Enable Input = Vin, Iout = 1.0 mA to Io(nom.)) IGND − 40 90 mA Quiescent Current (TA = −40 °C to 85°C) (Enable Input = 0 V) (Enable Input = Vin, Iout = 1.0 mA to Io(nom.)) IQ − − 0.03 40 1.0 90 mA Output Short Circuit Current (Vout = 0 V) 1.5 V−3.9 V (Vin = Vout(nom.) + 2.0 V) 4.0 V−5.0 V (Vin = 6.0 V) Iout(max) 150 150 300 300 600 600 mA Output Voltage Noise (f = 100 Hz to 100 kHz) Iout = 30 mA, Cout = 1 mF Vn − 100 − mVrms Enable Input Threshold Voltage (Voltage Increasing, Output Turns On, Logic High) (Voltage Decreasing, Output Turns Off, Logic Low) Vth(en) 0.95 − − − − 0.3 V Output Voltage Temperature Coefficient TC − "100 − ppm/ °C 3. Maximum package power dissipation limits must be observed. PD + TJ(max) *TA R qJA 4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. |
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