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NCP631GD2TR4G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP631GD2TR4G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 9 page NCP631 http://onsemi.com 5 3.0 1.5 0 0 −50 −100 −150 TIME ( mS) Cin = 68 mF, Al Electrolytic Cout = 33 mF, Al Electrolytic Vin = 5.0 V 0 1020 3040 50 60 4.5 7 6 5 40 20 0 −20 −40 60 TIME ( mS) Cin = 1.0 mF Cout = 33 mF, Al Electrolytic Iout = 200 mA 0 1020 3040 50 60 0.000 0.200 0.400 0.600 0.800 1.000 1.200 1 10 100 1,000 10,000 100,000 1,000,000 f, FREQUENCY (Hz) Figure 8. Noise Characterization 0 20 40 40 80 100 120 10 100 1,000 10,000 100,000 f, FREQUENCY (Hz) Vin = 4.47 V Cout = 33 mF Cin = 100 mF Iout = 10 mA Vin = 5.0 V + 0.5 Vpp Cout = 100 mF, Al Electrolytic Iout = 10 mA Figure 9. Ripple Rejection vs. Frequency 7 6 5 40 30 20 10 0 50 TIME ( mS) Cin = 68 mF, Al Electrolytic Cout = 33 mF, Al Electrolytic Iout = 200 mA 0 100 200 300 400 500 600 Figure 10. Line Transient Figure 11. Line Transient Figure 12. Load Transient Iout = 100 mA to 3.0 A |
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Similar Description - NCP631GD2TR4G |
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