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BYG80 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BYG80
Description  Ultra fast low-loss controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYG80 Datasheet(HTML) 4 Page - NXP Semiconductors

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1997 Nov 25
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.27.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm, see Fig.27.
For more information please refer to the
“General Part of associated Handbook”.
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYG80A
55
−−
V
BYG80B
110
−−
V
BYG80C
165
−−
V
BYG80D
220
−−
V
BYG80F
330
−−
V
BYG80G
440
−−
V
BYG80J
675
−−
V
IR
reverse current
VR =VRRMmax;
see Figs 24 and 25
−−
10
µA
IR
reverse current
VR =VRRMmax; Tj = 165 °C;
see Figs 24 and 25
BYG80A to D
−−
100
µA
BYG80F; BYG80G and J
−−
150
µA
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.29
BYG80A to D
−−
25
ns
BYG80F; BYG80G and J
−−
50
ns
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.26
BYG80A to D
90
pF
BYG80F; BYG80G
70
pF
BYG80J
65
pF
maximum slope of reverse
recovery current
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1A/µs;
see Fig.28
BYG80A to D
−−
3A/
µs
BYG80F; BYG80G and J
−−
4A/
µs
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------


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