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BYG80 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BYG80
Description  Ultra fast low-loss controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYG80 Datasheet(HTML) 3 Page - NXP Semiconductors

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1997 Nov 25
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYG80 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
IF(AV)
average forward current
Tamb =60 °C; epoxy PCB mounting
(see Fig.27); see Figs 5, 6 and 7
averaged over any 20 ms period;
see also Figs 17, 18 and 19
BYG80A to D
0.95
A
BYG80F; BYG80G
0.85
A
BYG80J
0.65
A
IFRM
repetitive peak forward current
Ttp = 100 °C; see Figs 8, 9 and 10
BYG80A to D
21
A
BYG80F; BYG80G
21
A
BYG80J
18
A
IFRM
repetitive peak forward current
Tamb =60 °C; AL2O3 PCB mounting;
see Figs 11, 12 and 13
BYG80A to D
11
A
BYG80F; BYG80G
11
A
BYG80J
9A
IFRM
repetitive peak forward current
Tamb =60 °C; epoxy PCB mounting;
see Figs 14, 15 and 16
BYG80A to D
8A
BYG80F; BYG80G
8A
BYG80J
6A
IFSM
non-repetitive peak forward current
t = 8.3 ms half sine wave; Tj =25 °C
prior to surge; VR =VRRMmax
BYG80A to D
36
A
BYG80F; BYG80G; BYG80J
32
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to surge;
inductive load switched off
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.20
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Figs 21, 22 and 23
BYG80A to D
−−
0.67
V
BYG80F; BYG80G
−−
0.73
V
BYG80J
−−
0.96
V
VF
forward voltage
IF = 1 A; see Figs 21, 22 and 23
BYG80A to D
−−
0.93
V
BYG80F; BYG80G
−−
0.98
V
BYG80J
−−
1.20
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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