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BYG80 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BYG80 Datasheet(HTML) 6 Page - NXP Semiconductors |
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1997 Nov 25 6 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series BYG80F and G Switched mode application; VR =VRRMmax; δ = 0.5; a = 1.42 Device mounted as shown in Fig.27; 1: Al2O3 PCB; 2: epoxy PCB. Fig.6 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 (1) (2) 200 100 Tamb (οC) 2 1.5 IF(AV) (A) 0.5 0 1 MGL080 BYG80J Switched mode application; VR =VRRMmax; δ = 0.5; a = 1.42 Device mounted as shown in Fig.27; 1: Al2O3 PCB; 2: epoxy PCB. Fig.7 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 0 200 0 0.4 0.8 1.2 1.6 40 (1) (2) IF(AV) (A) 80 120 Tamb (oC) 160 MGL092 Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. BYG80A to D Ttp = 100 °C; Rth j-tp = 25 K/W. VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V. handbook, full pagewidth 30 0 10 IFRM (A) 20 MGL086 10−2 10−1 110 tP (ms) 102 103 104 δ = 0.05 1 0.1 0.2 0.5 |
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