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BYG70 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BYG70
Description  Fast soft-recovery controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BYG70 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1996 Jun 05
3
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG70 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm, see Fig.7.
For more information please refer to the
“General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF =1A; Tj =Tj max; see Fig.5
−−
2.1
V
IF = 1 A; see Fig.5
−−
3.6
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYG70D
300
−−
V
BYG70G
500
−−
V
BYG70J
700
−−
V
IR
reverse current
VR =VRRMmax;
see Fig.6
−−
5
µA
VR =VRRMmax; Tj = 165 °C;
see Fig.6
−−
100
µA
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
−−
30
ns
Cd
diode capacitance
VR = 0 V; f = 1 MHz
30
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W


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