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BYG70 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BYG70
Description  Fast soft-recovery controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BYG70 Datasheet(HTML) 2 Page - NXP Semiconductors

   
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1996 Jun 05
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG70 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• UL 94V-O classified plastic
package
• Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
Top view
Side view
cathode
band
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYG70D
200
V
BYG70G
400
V
BYG70J
600
V
VR
continuous reverse voltage
BYG70D
200
V
BYG70G
400
V
BYG70J
600
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 100 °C; see Fig.2
1.00
A
averaged over any 20 ms period;
Al2O3 PCB mounting (see Fig.7);
Tamb =60 °C; see Fig.3
0.53
A
averaged over any 20 ms period;
epoxy PCB mounting (see Fig.7);
Tamb =60 °C; see Fig.3
0.39
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
20
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to surge;
inductive load switched off
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.4
−65
+175
°C


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