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BYG60 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BYG60
Description  Fast soft-recovery controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BYG60 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1996 Jun 05
3
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm, see Fig.7.
For more information please refer to the
‘General Part of Handbook SC01’.
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
BYG60D to J
10
mJ
BYG60K and M
7
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.4
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max; see Fig.5
−−
0.98
V
IF = 1 A; see Fig.5
−−
1.20
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYG60D
300
−−
V
BYG60G
500
−−
V
BYG60J
700
−−
V
BYG60K
900
−−
V
BYG60M
1100
−−
V
IR
reverse current
VR =VRRMmax;
see Fig.6
−−
5
µA
VR =VRRMmax; Tj = 165 °C;
see Fig.6
−−
100
µA
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.8
BYG60D to J
−−
250
ns
BYG60K and M
−−
300
ns
Cd
diode capacitance
VR = 0 V; f = 1 MHz
BYG60D to J
30
pF
BYG60K and M
25
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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