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BYD77 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BYD77
Description  Ultra fast low-loss controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BYD77 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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1999 Nov 15
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD77 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
IFRM
repetitive peak forward current
Ttp = 105 °C; see Figs 6 and 7
BYD77A to D
15
A
BYD77E to G
13
A
IFRM
repetitive peak forward current
Tamb =60 °C; see Figs 8 and 9
BYD77A to D
8.5
A
BYD77E to G
8.0
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
25
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =25 °C prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Figs 12 and 13
BYD77A to D
−−
0.75
V
BYD77E to G
−−
0.83
V
VF
forward voltage
IF =1A;
see Figs 12 and 13
BYD77A to D
−−
0.98
V
BYD77E to G
−−
1.05
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD77A
55
−−
V
BYD77B
110
−−
V
BYD77C
165
−−
V
BYD77D
220
−−
V
BYD77E
275
−−
V
BYD77F
330
−−
V
BYD77G
440
−−
V
IR
reverse current
VR =VRRMmax;
see Fig.14
−−
1
µA
VR =VRRMmax;
Tj = 165 °C; see Fig.14
−−
100
µA
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig.18
BYD77A to D
−−
25
ns
BYD77E to G
−−
50
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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