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BYD72 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYD72 Datasheet(HTML) 3 Page - NXP Semiconductors |
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1998 Dec 03 3 Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers BYD72 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm, pitch 5 mm; see Fig.8. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 1 A; see Figs 4 and 5 BYD72A to D 0.98 V BYD72E to G 1.05 V IR reverse current VR =VRRMmax 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.6 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.9 BYD72A to D 25 ns BYD72E to G 50 ns VFRM forward recovery voltage when switched to IF = 1 A in 50 ns BYD72A to D 1.55 V BYD72E to G 3.40 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 150 K/W |
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