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BYD72 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BYD72
Description  Ultra fast low-loss controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD72 Datasheet(HTML) 3 Page - NXP Semiconductors

  BYD72 Datasheet HTML 1Page - NXP Semiconductors BYD72 Datasheet HTML 2Page - NXP Semiconductors BYD72 Datasheet HTML 3Page - NXP Semiconductors BYD72 Datasheet HTML 4Page - NXP Semiconductors BYD72 Datasheet HTML 5Page - NXP Semiconductors BYD72 Datasheet HTML 6Page - NXP Semiconductors BYD72 Datasheet HTML 7Page - NXP Semiconductors BYD72 Datasheet HTML 8Page - NXP Semiconductors  
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1998 Dec 03
3
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD72 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer
≥40 µm,
pitch 5 mm; see Fig.8.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 1 A; see Figs 4 and 5
BYD72A to D
0.98
V
BYD72E to G
1.05
V
IR
reverse current
VR =VRRMmax
1
µA
VR =VRRMmax; Tj = 165 °C; see Fig.6
100
µA
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.9
BYD72A to D
25
ns
BYD72E to G
50
ns
VFRM
forward recovery voltage
when switched to IF = 1 A in 50 ns
BYD72A to D
1.55
V
BYD72E to G
3.40
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
150
K/W


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