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BYD72 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BYD72
Description  Ultra fast low-loss controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD72 Datasheet(HTML) 2 Page - NXP Semiconductors

  BYD72 Datasheet HTML 1Page - NXP Semiconductors BYD72 Datasheet HTML 2Page - NXP Semiconductors BYD72 Datasheet HTML 3Page - NXP Semiconductors BYD72 Datasheet HTML 4Page - NXP Semiconductors BYD72 Datasheet HTML 5Page - NXP Semiconductors BYD72 Datasheet HTML 6Page - NXP Semiconductors BYD72 Datasheet HTML 7Page - NXP Semiconductors BYD72 Datasheet HTML 8Page - NXP Semiconductors  
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1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD72 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD120) and symbol.
handbook, halfpage
ka
MGL571
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD72A
50
V
BYD72B
100
V
BYD72C
150
V
BYD72D
200
V
BYD72E
250
V
BYD72F
300
V
BYD72G
400
V
VR
continuous reverse voltage
BYD72A
50
V
BYD72B
100
V
BYD72C
150
V
BYD72D
200
V
BYD72E
250
V
BYD72F
300
V
BYD72G
400
V
IF(AV)
average forward current
Tamb =25 °C; printed-circuit board
mounting, pitch 5 mm, see Fig.8;
averaged over any 20 ms period;
see Figs 2 and 3
BYD72A to D
1.02
A
BYD72E to G
0.95
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =25 °C; VR =VRRMmax
15
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.7
−65
+175
°C


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