 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BYD71 Datasheet(PDF) 4 Page - NXP Semiconductors |
|
||||||||||||||||||||||||||||||
BYD71 Datasheet(HTML) 4 Page - NXP Semiconductors |
|
|
4 / 11 page 
1996 Sep 19 4 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16. For more information please refer to the “General Part of associated Handbook”. Cd diode capacitance f = 1 MHz; VR =0V; see Fig.15 BYD71A to D − 25 − pF BYD71E to G − 20 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1A/µs; see Fig.17 BYD71A to D −− 4A/ µs BYD71E to G −− 5A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 180 K/W Rth j-a thermal resistance from junction to ambient note 1 250 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI R dt -------- |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
