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BYD71 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BYD71
Description  Ultra fast low-loss controlled avalanche rectifiers
Download  11 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD71 Datasheet(HTML) 3 Page - NXP Semiconductors

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1996 Sep 19
3
Not recommended for new designs
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD71 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
IFRM
repetitive peak forward current
Ttp =55 °C; see Figs 6 and 7
BYD71A to D
4.7
A
BYD71E to G
5.0
A
IFRM
repetitive peak forward current
Tamb =60 °C; see Figs 8 and 9
BYD71A to D
3.7
A
BYD71E to G
3.9
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
7A
PRSM
non-repetitive peak reverse power
dissipation
t=20
µs half sine wave; Tj =Tj max
prior to surge
BYD71A to D
250
W
BYD71E to G
150
W
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 0.5 A; Tj =Tj max;
see Figs 12 and 13
BYD71A to D
−−
0.84
V
BYD71E to G
−−
0.90
V
VF
forward voltage
IF = 0.5 A;
see Figs 12 and 13
BYD71A to D
−−
1.05
V
BYD71E to G
−−
1.11
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD71A
55
−−
V
BYD71B
110
−−
V
BYD71C
165
−−
V
BYD71D
220
−−
V
BYD71E
275
−−
V
BYD71F
330
−−
V
BYD71G
440
−−
V
IR
reverse current
VR =VRRMmax;
see Fig 14
−−
1
µA
VR =VRRMmax;
Tj = 165 °C; see Fig 14
−−
75
µA
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A
see Fig 18
BYD71A to D
−−
25
ns
BYD71E to G
−−
50
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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