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BC517 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BC517
Description  NPN Darlington Transistor
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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BC517 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BC517 Rev. A
January 2005
BC517
NPN Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 1.0A.
• Sourced from process 05.
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a = 25°C unless otherwise noted
Thermal Characteristics T
a = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current
- Continuous
1.2
A
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
Symbol
Parameter
Conditions
Min.
Max
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 2.0mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100nA, IC = 0
10
V
ICBO
Collector Cut-off Current
VCB = 30V, IE = 0
100
nA
On Characteristics *
hFE
DC Current Gain
VCE = 2.0V, IC = 20mA
30,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100mA, IB = 0.1mA
1
V
VBE(on)
Base-Emitter On Voltage
IC = 10mA, VCE = 5.0V
1.4
V
Symbol
Parameter
Value
Units
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
1. Collector 2. Base 3. Emitter
TO-92
1


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