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BAV99WT1G Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BAV99WT1G
Description  Small Signal Diode
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

BAV99WT1G Datasheet(HTML) 1 Page - Fairchild Semiconductor

  BAV99WT1G Datasheet HTML 1Page - Fairchild Semiconductor BAV99WT1G Datasheet HTML 2Page - Fairchild Semiconductor BAV99WT1G Datasheet HTML 3Page - Fairchild Semiconductor  
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©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
April 2005
BAV99WT1G Rev. A
BAV99WT1G
Small Signal Diode
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
Thermal Characteristics
FR-4 board (3.0
× 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics T
C = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VRRM
Maximum Repetitive Reverse Voltage
70
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
TSTG
Storage Temperature Range
-65 to +150
°C
TJ
Operating Junction Temperature
150
°C
Symbol
Parameter
Value
Unit
PD
Power Dissipation
270
mW
RθJA
Thermal Resistance, Junction to Ambient
460
°C/W
Symbol
Parameter
Conditions
Min.
Max
Units
VR
Breakdown Voltage
IR = 100µA70
V
VF
Forward Voltage
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
715
855
1.0
1.25
mV
mV
V
V
IR
Reverse Leakage
VR = 70V
VR = 25V, TA = 150°C
VR = 70V, TA = 150°C
2.5
50
70
µA
µA
µA
CT
Total Capacitance
VR = 0V, f = 1.0MHz
2.0
pF
trr
Reverse Recovery Time
IF = IR = 10mA, IRR = 1.0mA,
RL = 100Ω
6.0
ns
Connection Diagram
3
1
12
3
FA
2
SOT-323


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