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BAS20 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BAS20 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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BAS20, Rev. B Small Signal Diode Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond 1.0 2.0 A A T stg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C SOT-23 3 1 2 2002 Fairchild Semiconductor Corporation Symbol Parameter Test Conditions Min Max Units V R Breakdown Voltage I R = 100 µA 200 V V F Forward Voltage I F = 100 mA I F = 200 mA 1.0 1.25 V V I R Reverse Current V R = 150 V V R = 150 V, TA = 150°C 100 100 nA µA C T Total Capacitance V R = 0, f = 1.0 MHz 5 pF t rr Reverse Recovery Time I F = IR = 30 mA, IRR = 3.0 mA, R L = 100Ω 6.0 ns Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 350 mW RθJA Thermal Resistance, Junction to Ambient 357 °C/W BAS20 1 2 3 A81. Connection Diagram 3 1 2NC |
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