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BYD37K Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYD37K Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 1999 Nov 16 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD37 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the “General Part of associated Handbook”. ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj =Tj max prior to surge; inductive load switched off BYD37D to J − 10 mJ BYD37K and M − 7mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.7 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj =Tj max; see Fig.8 −− 1.1 V IF =1A; see Fig.8 −− 1.3 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYD37D 300 −− V BYD37G 500 −− V BYD37J 700 −− V BYD37K 900 −− V BYD37M 1100 −− V IR reverse current VR =VRRMmax; see Fig.9 −− 1 µA VR =VRRMmax; Tj = 165 °C; see Fig.9 −− 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25A; see Fig.12 BYD37D to J −− 250 ns BYD37K and M −− 300 ns Cd diode capacitance f = 1 MHz; VR =0; see Fig.10 − 20 − pF maximum slope of reverse recovery current when switched from IF =1AtoVR ≥ 30 V and dIF/dt = −1A/µs; see Fig.13 BYD37D to J −− 6A/ µs BYD37K and M −− 5A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 30 K/W Rth j-a thermal resistance from junction to ambient note 1 150 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT dI R dt -------- |
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