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NUD3105D Datasheet(PDF) 2 Page - ON Semiconductor |
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NUD3105D Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NUD3105D http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Rating Value Unit VDSS Drain to Source Voltage − Continuous 6.0 Vdc VGS Gate to Source Voltage – Continuous 6.0 Vdc ID Drain Current – Continuous 500 mA Ez Single Pulse Drain−to−Source Avalanche Energy ( TJinitial = 25°C) 50 mJ TJ Junction Temperature 150 °C TA Operating Ambient Temperature −40 to 85 °C Tstg Storage Temperature Range −65 to +150 °C PD Total Power Dissipation (Note 1) Derating Above 25°C 380 1.5 mW mW/°C RqJA Thermal Resistance Junction−to−Ambient 329 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD−883, Method 3015. Machine Model Method 200 V. TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS VBRDSS Drain to Source Sustaining Voltage (Internally Clamped) (ID = 10 mA) 6.0 8.0 9.0 V BVGSO Ig = 1.0 mA − − 8.0 V IDSS Drain to Source Leakage Current (VDS = 5.5 V , VGS = 0 V, TJ = 25°C) (VDS = 5.5 V, VGS = 0 V, TJ = 85°C ) − − − − 15 15 mA IGSS Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) 5.0 − − − 35 65 mA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 85°C) 0.8 0.8 1.2 − 1.4 1.4 V RDS(on) Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TJ = 85°C) (ID = 500 mA, VGS = 5.0 V, TJ = 85°C) − − − − − − − − − − 1.2 1.3 0.9 1.3 0.9 W IDS(on) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C) 300 200 400 − − − mA gFS Forward Transconductance (VOUT = 5.0 V, IOUT = 0.25 A) 350 570 − mMhos |
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