NUD3048MT1 datasheet(2/4 Pages) ONSEMI

Part #	NUD3048MT1

Description	FET Switch 100 V, 800 mohm N-Channel, TSOP-6

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Manufacturer	ONSEMI [ON Semiconductor]

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NUD3048

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MAXIMUM RATINGS

Symbol

Rating

Value

Unit

VDSS

Drain to Source Voltage – Continuous

100

V

VG1SS

Gate to Source Voltage – Continuous @ 1.0 mA

15

V

ID

Drain Current – Continuous (TA =25

_C) (Note 1)

(Note 2)

0.7

1.2

A

PD

Power Dissipation (TA =25

_C) (Note 1)

(Note 2)

0.66

1.56

W

VG2SS

Gate Resistor to Source Voltage – Continuous

100

V

TJmax

Maximum Junction Temperature

150

°C

RqJA

Thermal Impedance (Junction−to−Ambient) (Note 1)

Thermal Impedance (Junction−to−Ambient) (Note 2)

190

80

°C/W

ESD

Human Body Model (HBM) Class 2

Machine Model Class A

According to EIA/JESD22/A114 Specification

2000

160

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

ELECTRICAL CHARACTERISTICS (TJ =25

_C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain to Source Leakage Current (VDS = 80 V, VGS = 0 V)

IDSS

−

20

100

mA

Gate Body Leakage Current

(VGS =10 V, VDS = 0 V)

(VGS = 10 V, VDS = 0 V, TJ = 125°C)

IGSS

−

3.0

6.0

10

20

mA

ON CHARACTERISTICS

Gate Threshold Voltage (ID = 1.0 mA)

VGS

1.3

1.7

2.0

V

Drain to Source Resistance (VGS = 4.5 V, ID = 100 mA)

RDS(on)

−

0.65

0.82

W

Drain to Source Resistance (VGS = 10 V, ID = 100 mA)

RDS(on)

−

0.6

0.72

W

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz)

Ciss

−

135

−

pF

Output Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz)

Coss

−

75

−

pF

Transfer Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz)

Crss

−

26

−

pF

GATE BIAS CHARACTERISTICS

Gate Resistor

RG

75

100

125

k

W

Gate Zener Breakdown Voltage (IZ = 1.0 mA) (Note 3)

Gate Zener Breakdown Voltage (IZ = 3.0 mA) (Note 4)

VZ

15

100

17

115

−

V

1. Min pad, 1 oz. Cu.

2. 1 inch pad, 1 oz Cu.

3. Measured from gate 1 to source.

4. Measured from gate 2 to source.

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