NTMS5P02R2_06 datasheet(3/7 Pages) ONSEMI

Part #	NTMS5P02R2

Description	Power MOSFET -5.4 Amps, -20 Volts

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMS5P02R2

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 5)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = −250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−20

−

−15

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = −16 Vdc, VGS = 0 Vdc, TJ = 25°C)

(VDS = −16 Vdc, VGS = 0 Vdc, TJ = 125°C)

(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C)

IDSS

−

−0.2

−1.0

−10

−

mAdc

Gate−Body Leakage Current

(VGS = −10 Vdc, VDS = 0 Vdc)

IGSS

−

−100

nAdc

Gate−Body Leakage Current

(VGS = +10 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = −250 mAdc)

Temperature Coefficient (Negative)

VGS(th)

−0.65

−

−0.9

2.9

−1.25

−

Vdc

mV/°C

Static Drain−to−Source On−State Resistance

(VGS = −4.5 Vdc, ID = −5.4 Adc)

(VGS = −2.5 Vdc, ID = −2.7 Adc)

RDS(on)

−

0.026

0.037

0.033

0.048

W

Forward Transconductance (VDS = −9.0 Vdc, ID = −5.4 Adc)

gFS

−

15

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = −16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

1375

1900

pF

Output Capacitance

Coss

−

510

900

Reverse Transfer Capacitance

Crss

−

200

380

SWITCHING CHARACTERISTICS (Notes 6 & 7)

Turn−On Delay Time

(VDD = −16 Vdc, ID = −1.0 Adc,

VGS = −4.5 Vdc,

RG = 6.0 W)

td(on)

−

18

35

ns

Rise Time

tr

−

25

50

Turn−Off Delay Time

td(off)

−

70

125

Fall Time

tf

−

55

100

Turn−On Delay Time

(VDD = −16 Vdc, ID = −5.4 Adc,

VGS = −4.5 Vdc,

RG = 6.0 W)

td(on)

−

22

−

ns

Rise Time

tr

−

70

−

Turn−Off Delay Time

td(off)

−

65

−

Fall Time

tf

−

90

−

Total Gate Charge

(VDS = −16 Vdc,

VGS = −4.5 Vdc,

ID = −5.4 Adc)

Qtot

−

20

35

nC

Gate−Source Charge

Qgs

−

4.0

−

Gate−Drain Charge

Qgd

−

7.0

−

BODY−DRAIN DIODE RATINGS (Note 6)

Diode Forward On−Voltage

(IS = −5.4 Adc, VGS = 0 V)

(IS = −5.4 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

−0.95

−0.72

−1.25

−

Vdc

Reverse Recovery Time

(IS = −5.4 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms)

trr

−

40

75

ns

ta

−

20

−

tb

−

20

−

Reverse Recovery Stored Charge

QRR

−

0.03

−

mC

5. Handling precautions to protect against electrostatic discharge is mandatory.

6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.

7. Switching characteristics are independent of operating junction temperature.

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