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NTMS3P03R2 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. NTMS3P03R2
Description  Power MOSFET -3.05 Amps, -30 Volts
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTMS3P03R2 Datasheet(HTML) 3 Page - ON Semiconductor

   
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NTMS3P03R2
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
−30
−30
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = −30 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = −30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−1.0
−10
mAdc
Gate−Body Leakage Current
(VGS = −20 Vdc, VDS = 0 Vdc)
IGSS
−100
nAdc
Gate−Body Leakage Current
(VGS = +20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
Temperature Coefficient (Negative)
VGS(th)
−1.0
−1.7
3.6
−2.5
Vdc
Static Drain−to−Source On−State Resistance
(VGS = −10 Vdc, ID = −3.05 Adc)
(VGS = −4.5 Vdc, ID = −1.5 Adc)
RDS(on)
0.063
0.090
0.085
0.115
W
Forward Transconductance (VDS = −15 Vdc, ID = −3.05 Adc)
gFS
5.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = −24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
520
750
pF
Output Capacitance
Coss
170
325
Reverse Transfer Capacitance
Crss
70
135
SWITCHING CHARACTERISTICS (Notes 6 & 7)
Turn−On Delay Time
(VDD = −24 Vdc, ID = −3.05 Adc,
VGS = −10 Vdc,
RG = 6.0 W)
td(on)
12
22
ns
Rise Time
tr
16
30
Turn−Off Delay Time
td(off)
45
80
Fall Time
tf
45
80
Turn−On Delay Time
(VDD = −24 Vdc, ID = −1.5 Adc,
VGS = −4.5 Vdc,
RG = 6.0 W)
td(on)
16
ns
Rise Time
tr
42
Turn−Off Delay Time
td(off)
32
Fall Time
tf
35
Total Gate Charge
(VDS = −24 Vdc,
VGS = −10 Vdc,
ID = −3.05 Adc)
Qtot
16
25
nC
Gate−Source Charge
Qgs
2.0
Gate−Drain Charge
Qgd
4.5
BODY−DRAIN DIODE RATINGS (Note 6)
Diode Forward On−Voltage
(IS = −3.05 Adc, VGS = 0 V)
(IS = −3.05 Adc, VGS = 0 V, TJ = 125°C)
VSD
−0.96
−0.78
−1.25
Vdc
Reverse Recovery Time
(IS = −3.05 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
trr
34
ns
ta
18
tb
16
Reverse Recovery Stored Charge
QRR
0.03
mC
5. Handling precautions to protect against electrostatic discharge is mandatory.
6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
7. Switching characteristics are independent of operating junction temperature.


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