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NTMS3P03R2 Datasheet(PDF) 2 Page - ON Semiconductor |
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NTMS3P03R2 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page ![]() NTMS3P03R2 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain−to−Source Voltage VDSS −30 V Gate−to−Source Voltage − Continuous VGS ±20 V Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 171 0.73 −2.34 −1.87 −8.0 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 100 1.25 −3.05 −2.44 −12 °C/W W A A A Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) RqJA PD ID ID IDM 62.5 2.0 −3.86 −3.1 −15 °C/W W A A A Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −30 Vdc, VGS = −4.5 Vdc, Peak IL = −7.5 Apk, L = 5 mH, RG = 25 W) EAS 140 mJ Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR−4 or G−10 PCB, t = steady state. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state. 3. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. |