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NTMS3P03R2 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NTMS3P03R2
Description  Power MOSFET -3.05 Amps, -30 Volts
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTMS3P03R2 Datasheet(HTML) 2 Page - ON Semiconductor

   
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NTMS3P03R2
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−30
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
171
0.73
−2.34
−1.87
−8.0
°C/W
W
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
100
1.25
−3.05
−2.44
−12
°C/W
W
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RqJA
PD
ID
ID
IDM
62.5
2.0
−3.86
−3.1
−15
°C/W
W
A
A
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = −30 Vdc, VGS = −4.5 Vdc, Peak IL = −7.5 Apk, L = 5 mH, RG = 25 W)
EAS
140
mJ
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum FR−4 or G−10 PCB, t = steady state.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state.
3. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.


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