NTJD2152PT2 datasheet(2/6 Pages) ONSEMI

Part #	NTJD2152PT2

Description	Trench Small Signal MOSFET

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NTJD2152P

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ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−8.0

−10.5

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

TJ

−6.0

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = −6.4 V

1.0

mA

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±8.0 V

10

mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.45

−0.83

−1.0

V

Gate Threshold Temperature

Coefficient

VGS(TH)/TJ

2.2

mV/ °C

Drain−to−Source On Resistance

RDS(on)

VGS = −4.5 V, ID = −0.57 A

0.22

0.3

W

VGS = −2.5 V, ID = −0.48 A

0.32

0.46

VGS = −1.8 V, ID = −0.20 A

0.51

0.9

Forward Transconductance

gFS

VGS = −4.0 V, ID = −0.57 A

2.0

S

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −8.0 V

160

225

pF

Output Capacitance

COSS

38

55

Reverse Transfer Capacitance

CRSS

28

40

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −5.0 V,

ID = −0.6 A

2.2

4.0

nC

Threshold Gate Charge

QG(TH)

0.1

Gate−to−Source Charge

QGS

0.5

Gate−to−Drain Charge

QGD

0.5

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −4.0 V,

ID = −0.5 A, RG = 8.0 W

13

ns

Rise Time

tr

23

Turn−Off Delay Time

td(OFF)

50

Fall Time

tf

36

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −0.23 A

TJ = 25°C

0.76

1.1

V

TJ = 125°C

0.63

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = −0.77 A

78

ns

2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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