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NTHD5904NT3 Datasheet(PDF) 1 Page - ON Semiconductor |
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NTHD5904NT3 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 2 1 Publication Order Number: NTHD5904N/D NTHD5904N Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET t Features • Low RDS(on) and Fast Switching Speed • Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6. Ideal Device for Applications Where Board Space is at a Premium. • ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for Applications Where Heat Transfer is Required. • Pb−Free Packages are Available Applications • DC−DC Buck or Boost Converters • Low Side Switching • Optimized for Battery and Low Side Switching Applications in Computing and Portable Equipment MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8.0 V Continuous Drain Current (Note 1) Steady State TA=25°C ID 3.3 A TA=85°C 2.4 t ≤ 5 s TA=25°C 4.5 Power Dissipation (Note 1) Steady State TA=25°C PD 1.13 W Continuous Drain Current (Note 2) Steady State TA=25°C ID 2.5 A TA=85°C 1.8 Power Dissipation (Note 2) TA=25°C PD 0.64 W Pulsed Drain Current tp=10 ms IDM 10 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 2.6 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 110 °C/W Junction−to−Ambient – t ≤ 5 s (Note 1) RqJA 60 Junction−to−Ambient – Steady State (Note 2) RqJA 195 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 0.214 in sq). 3. ESD Rating Information: Human Body Model (HBM) Class 0. ChipFET CASE 1206A STYLE 2 http://onsemi.com 20 V 55 m W @ 2.5 V 40 m W @ 4.5 V RDS(on) TYP 4.5 A ID MAX V(BR)DSS N−Channel MOSFET MARKING DIAGRAM 1 2 3 4 S1 G1 S2 G2 D1 D1 D2 D2 (Top View) PIN CONNECTIONS 8 7 6 5 5 6 7 81 2 3 4 D1, D2 G1, G2 S1, S2 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION D3 = Specific Device Code M = Month Code G = Pb−Free Package |
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