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BYD32 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BYD32
Description  Fast soft-recovery controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BYD32 Datasheet(HTML) 2 Page - NXP Semiconductors

   
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1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery controlled
avalanche rectifiers
BYD32 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD 120
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD120) and symbol.
handbook, halfpage
ka
MGL571
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD32D
200
V
BYD32G
400
V
BYD32J
600
V
VR
continuous reverse voltage
BYD32D
200
V
BYD32G
400
V
BYD32J
600
V
IF(AV)
average forward current
Tamb =25 °C; printed-circuit board
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period;
see Fig.2
0.76
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =25 °C; VR =VRRMmax
15
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.3
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 1 A; see Fig.4
1.3
V
IR
reverse current
VR =VRRMmax
1
µA
VR =VRRMmax; Tj = 165 °C; see Fig.5
100
µA
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.7
250
ns


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