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NTHD4P02FT1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTHD4P02FT1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 7 1 Publication Order Number: NTHD4P02F/D NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFET t Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal Characteristics • Independent Pinout to each Device to Ease Circuit Design • Ultra Low VF Schottky • Pb−Free Package is Available Applications • Li−Ion Battery Charging • High Side DC−DC Conversion Circuits • High Side Drive for Small Brushless DC Motors • Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Units Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current Steady State TJ = 25°C ID −2.2 A TJ = 85°C −1.6 t v 5 s TJ = 25°C ID −3.0 A Pulsed Drain Current tp = 10 ms IDM −9.0 A Power Dissipation Steady State TJ = 25°C PD 1.1 W TJ = 85°C 0.6 t v 5 s TJ = 25°C 2.1 Continuous Source Current (Body Diode) IS −2.1 A Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Units Peak Repetitive Reverse Voltage VRRM 20 V DC Blocking Voltage VR 20 V Average Rectified Forward Current Steady State TJ = 25°C IF 2.2 A t v 5 s 3.0 A Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Device Package Shipping† ORDERING INFORMATION NTHD4P02FT1 ChipFET 3000/Tape & Reel ChipFET CASE 1206A STYLE 3 PIN CONNECTIONS MARKING DIAGRAM 1 2 3 4 8 7 6 5 http://onsemi.com G D P−Channel MOSFET S C A SCHOTTKY DIODE 8 7 6 5 4 3 2 1 C C D D A A S G NTHD4P02FT1G ChipFET (Pb−free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. −20 V 20 V 200 m W @ −2.5 V −130 m W @ −4.5 V 0.510 V RDS(on) TYP −3.0 A 3.0 A ID MAX V(BR)DSS MOSFET SCHOTTKY DIODE VR MAX IF MAX VF TYP C3 = Specific Device Code M = Month Code G = Pb−Free Package |
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