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BYD31 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BYD31
Description  Fast soft-recovery controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BYD31 Datasheet(HTML) 2 Page - NXP Semiconductors

   
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1996 Sep 18
2
Not recommended for new designs
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYD31 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD91) and symbol.
MAM196
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD31D
200
V
BYD31G
400
V
BYD31J
600
V
BYD31K
800
V
BYD31M
1000
V
VR
continuous reverse voltage
BYD31D
200
V
BYD31G
400
V
BYD31J
600
V
BYD31K
800
V
BYD31M
1000
V
IF(AV)
average forward current
Ttp =55 °C; lead length = 10 mm;
see Fig.2; averaged over any
20 ms period;
see also Fig.6
440
mA
Tamb =60 °C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
320
mA
IFRM
repetitive peak forward current
Ttp =55 °C; see Fig.4
4A
Tamb =60 °C; see Fig.5
3A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
5A


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