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NB4N855S Datasheet(PDF) 4 Page - ON Semiconductor

Part No. NB4N855S
Description  3.3 V, 1.5 Gb/s Dual AnyLevel TM to LVDS Receiver/Driver/Buffer/ Translator
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NB4N855S Datasheet(HTML) 4 Page - ON Semiconductor

   
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NB4N855S
http://onsemi.com
4
Table 4. DC CHARACTERISTICS, CLOCK INPUTS, LVDS OUTPUTS VCC = 3.0 V to 3.6 V, GND = 0 V, TA = −40°C to +85°C
Symbol
Characteristic
Min
Typ
Max
Unit
ICC
Power Supply Current (Note 3)
40
53
mA
DIFFERENTIAL INPUTS DRIVEN SINGLE−ENDED (Figures 10 and 12)
Vth
Input Threshold Reference Voltage Range (Note 4)
GND +100
VCC − 100
mV
VIH
Single−ended Input HIGH Voltage
Vth + 100
VCC
mV
VIL
Single−ended Input LOW Voltage
GND
Vth − 100
mV
DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (Figures 11 and 13)
VIHD
Differential Input HIGH Voltage
100
VCC
mV
VILD
Differential Input LOW Voltage
GND
VCC − 100
mV
VCMR
Input Common Mode Range (Differential Configuration)
GND + 50
VCC − 50
mV
VID
Differential Input Voltage (VIHD − VILD)
100
VCC
mV
LVDS OUTPUTS (Note 5)
VOD
Differential Output Voltage
250
450
mV
DVOD
Change in Magnitude of VOD for Complementary Output States (Note 6)
0
1.0
25
mV
VOS
Offset Voltage (Figure 9)
1125
1375
mV
DVOS
Change in Magnitude of VOS for Complementary Output States (Note 6)
0
1.0
25
mV
VOH
Output HIGH Voltage (Note 7)
1425
1600
mV
VOL
Output LOW Voltage (Note 8)
900
1075
mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Dx/Dx at the DC level within VCMR and output pins loaded with RL = 100 W across differential.
4. Vth is applied to the complementary input when operating in single−ended mode.
5. LVDS outputs require 100 W receiver termination resistor between differential pair. See Figure 8.
6. Parameter guaranteed by design verification not tested in production.
7. VOHmax = VOSmax + ½ VODmax.
8. VOLmax = VOSmin − ½ VODmax.


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