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BY8200 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BY8200
Description  Ultra fast high-voltage soft-recovery controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BY8200 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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1998 Jul 16
3
Philips Semiconductors
Product specification
Ultra fast high-voltage soft-recovery
controlled avalanche rectifiers
BY8200 series
Note
1. Withstands peak currents during flash-over in a picture tube.
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
IF(AV)
average forward current
averaged over any
20 ms period; see Figs 2 to 5
BY8206
10
mA
BY8208
5mA
BY8210
5mA
BY8212
5mA
IFRM
repetitive peak forward current
note 1
500
mA
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
BY8206
−65
+160
°C
BY8208
−65
+155
°C
BY8210
−65
+150
°C
BY8212
−65
+145
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 10 mA; see Figs 6 to 9
BY8206
−−
19
V
BY8208
−−
23
V
BY8210
−−
29
V
BY8212
−−
35
V
IR
reverse current
VR =VRRM1; Tj = 120 °C
−−
3
µA
Qr
recovery charge
when switched from IF = 100 mA to
VR ≥ 100 V and dIF/dt = −200 mA/µs;
see Fig 10
0.2
nC
trr
reverse recovery time
when switched from IF = 2 mA to
IR = 4 mA; measured at IR = 1 mA;
see Fig 11
−−
< 45
ns
Cd
diode capacitance
VR =0V; f=1MHz
BY8206
0.50
pF
BY8208
0.42
pF
BY8210
0.35
pF
BY8212
0.30
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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