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CAT93C57XET2E Datasheet(PDF) 2 Page - Catalyst Semiconductor

Part # CAT93C57XET2E
Description  2K-Bit Microwire Serial EEPROM
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Manufacturer  CATALYST [Catalyst Semiconductor]
Direct Link  http://www.catalyst-semiconductor.com
Logo CATALYST - Catalyst Semiconductor

CAT93C57XET2E Datasheet(HTML) 2 Page - Catalyst Semiconductor

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CAT93C56/57
Doc. No. 1088, Rev. O
D.C. OPERATING CHARACTERISTICS
VCC = +1.8V to +5.5V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC1
Power Supply Current
fSK = 1MHz
3
mA
(Write)
VCC = 5.0V
ICC2
Power Supply Current
fSK = 1MHz
500
µA
(Read)
VCC = 5.0V
ISB1
Power Supply Current
CS = 0V
10
µA
(Standby) (x8 Mode)
ORG=GND
ISB2
Power Supply Current
CS=0V
0
10
µA
(Standby) (x16Mode)
ORG=Float or VCC
ILI
Input Leakage Current
VIN = 0V to VCC
1
µA
ILO
Output Leakage Current
VOUT = 0V to VCC,1
µA
(Including ORG pin)
CS = 0V
VIL1
Input Low Voltage
4.5V
≤ VCC < 5.5V
-0.1
0.8
V
VIH1
Input High Voltage
4.5V
≤ VCC < 5.5V
2
VCC + 1
V
VIL2
Input Low Voltage
1.8V
≤ VCC < 4.5V
0
VCC x 0.2
V
VIH2
Input High Voltage
1.8V
≤ VCC < 4.5V
VCC x 0.7
VCC+1
V
VOL1
Output Low Voltage
4.5V
≤ VCC < 5.5V
0.4
V
IOL = 2.1mA
VOH1
Output High Voltage
4.5V
≤ VCC < 5.5V
2.4
V
IOH = -400
µA
VOL2
Output Low Voltage
1.8V
≤ VCC < 4.5V
0.2
V
IOL = 1mA
VOH2
Output High Voltage
1.8V
≤ VCC < 4.5V
VCC - 0.2
V
IOH = -100
µA
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias .................. -55
°C to +125°C
Storage Temperature ........................ -65
°C to +150°C
Voltage on any Pin with
Respect to Ground(1) ............. -2.0V to +VCC +2.0V
VCC with Respect to Ground ................ -2.0V to +7.0V
Package Power Dissipation
Capability (TA = 25
°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(2) ........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Reference Test Method
Min
Typ
Max
Units
NEND(3)
Endurance
MIL-STD-883, Test Method 1033
1,000,000
Cycles/Byte
TDR(3)
Data Retention
MIL-STD-883, Test Method 1008
100
Years
VZAP(3)
ESD Susceptibility
MIL-STD-883, Test Method 3015
2000
Volts
ILTH(3)(4)
Latch-Up
JEDEC Standard 17
100
mA
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.


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