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S4DNFS30 Datasheet(PDF) 5 Page - STMicroelectronics |
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S4DNFS30 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 12 page STS4DNFS30 Electrical characteristics 5/12 Table 7. Switching times Symbol Parameter Test Conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD = 15V, ID = 2A, RG = 4.7Ω, VGS = 5V (see Figure 12) 9 17 ns ns td(off) tf Turn-off delay time Fall time VDD = 15V, ID = 2A, RG = 4.7Ω, VGS = 5V (see Figure 12) 15 6 ns ns Table 8. Source drain diode Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 4.5 13 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 4.5A, VGS = 0 1.2 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4.5A, di/dt = 100A/µs VDD = 15V, Tj = 150°C (see Figure 17) 22 14.3 1.3 ns nC A |
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