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CAT28F512H-90T Datasheet(PDF) 9 Page - Catalyst Semiconductor |
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CAT28F512H-90T Datasheet(HTML) 9 Page - Catalyst Semiconductor |
9 / 15 page CAT28F512 9 Doc. No. 1084, Rev. H ADDRESSES CE (E) OE (G) WE (W) DATA (I/O) VCC VPP tWC tWC tRC tCS tCH tCS tCH tCH tEHQZ tDF tGHWL tWPH tWHWH2 tWHGL tWP tDS HIGH-Z DATA IN = 20H DATA IN = A0H VALID DATA OUT tDH tWP tDH tDS tDS tWP tDH tOLZ tOE tOH tLZ tCE tVPEL VPPH VPPL 0V 5.0V VCC POWER-UP & STANDBY SETUP ERASE COMMAND ERASE COMMAND ERASING ERASE VERIFY COMMAND ERASE VERIFICATION VCC POWER-DOWN/ STANDBY tAS tAH DATA IN = 20H tWC WRITE OPERATIONS The following operations are initiated by observing the sequence specified in the Write Command Table. Read Mode The device can be put into a standard READ mode by initiating a write cycle with 00H on the data bus. The subsequent read cycles will be performed similar to a standard EPROM or EEPROM Read. Signature Mode An alternative method for reading device signature (see Read Operations Signature Mode), is initiated by writing the code 90H into the command register while keeping VPP high. A read cycle from address 0000H with CE and OE low (and WE high) will output the device signature. CATALYST Code = 00110001 (31H) A Read cycle from address 0001H retrieves the binary code for the device on outputs I/O0 to I/O7. 28F512 Code = 1011 1000 (B8H) Figure 4. A.C. Timing for Erase Operation Erase Mode During the first Write cycle, the command 20H is written into the command register. In order to commence the erase operation, the identical command of 20H has to be written again into the register. This two-step process ensures against accidental erasure of the memory con- tents. The final erase cycle will be stopped at the rising edge of WE, at which time the Erase Verify command (A0H) is sent to the command register. During this cycle, the address to be verified is sent to the address bus and latched when WE goes low. An integrated stop timer allows for automatic timing control over this operation, eliminating the need for a maximum erase timing speci- fication. Refer to AC Characteristics (Program/Erase) for specific timing parameters. |
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