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NUP2201MR6 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. NUP2201MR6
Description  Low Capacitance TSOP−6 Diode−TVS Array for High Speed Data Lines Protection
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NUP2201MR6 Datasheet(HTML) 2 Page - ON Semiconductor

   
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NUP2201MR6
http://onsemi.com
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ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
(Note 2)
5.0
V
Breakdown Voltage
VBR
IT=1 mA, (Note 3)
6.0
V
Reverse Leakage Current
IR
VRWM = 5 V
5.0
mA
Clamping Voltage
VC
IPP = 5 A (Note 4)
12.5
V
Clamping Voltage
VC
IPP = 8 A (Note 4)
20
V
Maximum Peak Pulse Current
IPP
8x20
ms Waveform
25
A
Junction Capacitance
CJ
VR = 0 V, f=1 MHz between I/O Pins and GND
3.0
5.0
pF
Junction Capacitance
CJ
VR = 0 V, f=1 MHz between I/O Pins
1.5
3.0
pF
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
4. Non−repetitive current pulse per Figure 1 (Pin 5 to Pin 2)
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
Figure 1. Pulse Derating Curve
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (°C)
Figure 2. 8
× 20 ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
020
40
60
t, TIME (
ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
80
Figure 3. Junction Capacitance vs Reverse Voltage
5.0
2.5
0.0
01
VBR, REVERSE VOLTAGE (V)
23
4
5
I/O lines
I/O−Ground
4.5
2.0
4.0
1.5
3.5
1.0
3.0
0.5
Figure 4. Clamping Voltage vs. Peak Pulse Current
(8 x 20
ms Waveform)
20
10
0
010
PEAK PULSE CURRENT (A)
20
30
40
50
18
8
16
6
14
4
12
2


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