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MC100EPT25DTR2G Datasheet(PDF) 3 Page - ON Semiconductor |
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MC100EPT25DTR2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 9 page MC100EPT25 http://onsemi.com 3 Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit VCC Positive Power Supply GND = 0 V VEE = −5.0 V 3.8 V VEE Negative Power Supply GND = 0 V VCC = +3.3 V −6 V VIN Input Voltage GND = 0 V 0 to VEE V IBB VBB Sink/Source ± 0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 8 SOIC 8 SOIC 190 130 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 8 SOIC 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm 8 TSSOP 8 TSSOP 185 140 °C/W °C/W qJC Thermal Resistance (Junction−to−Case) Standard Board 8 TSSOP 41 to 44 °C/W qJA Thermal Resistance (Junction−to−Ambient) 0 lfpm 500 lfpm DFN8 DFN8 129 84 °C/W °C/W Tsol Wave Solder Pb Pb−Free <2 to 3 sec @ 248°C <2 to 3 sec @ 260°C 265 265 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 4. NECL DC CHARACTERISTICS VCC = 3.3 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V (Note 2) Symbol Characteristic −40°C 25°C 85°C Unit Min Typ Max Min Typ Max Min Typ Max IEE Power Supply Current 8.0 16 25 8.0 16 25 8.0 16 25 mA VIH Input HIGH Voltage Single−Ended −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage Single−Ended −1945 −1625 −1945 −1625 −1945 −1625 mV VBB Output Voltage Reference −1525 −1425 −1325 −1525 −1425 −1325 −1525 −1425 −1325 mV VIHCMR Input HIGH Voltage Common Mode Range (Note 3) VEE + 2.0 0.0 VEE + 2.0 0.0 VEE + 2.0 0.0 V IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Input parameters vary 1:1 with GND. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Table 5. TTL OUTPUT DC CHARACTERISTICS VCC = 3.3 V; VEE = −5.5 V to −3.0 V; GND = 0.0 V; TA = −40°C to 85°C Symbol Characteristic Condition Min Typ Max Unit VOH Output HIGH Voltage IOH = −3.0 mA 2.2 V VOL Output LOW Voltage IOL = 24 mA 0.5 V ICCH Power Supply Current 6 10 14 mA ICCL Power Supply Current 7 12 17 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. |
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