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MC100EPT23MNR4G Datasheet(PDF) 3 Page - ON Semiconductor |
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MC100EPT23MNR4G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page MC100EPT23 http://onsemi.com 3 Table 4. PECL DC CHARACTERISTICS VCC = 3.3 V, GND = 0 V (Note 2) Symbol Characteristic −40 °C 25 °C 85 °C Unit Min Typ Max Min Typ Max Min Typ Max ICCH Power Supply Current (Outputs set to HIGH) 10 18 25 10 18 25 10 18 25 mA ICCL Power Supply Current (Outputs set to LOW) 15 26 36 15 26 36 15 26 36 mA VIH Input HIGH Voltage 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage 1355 1675 1355 1675 1355 1675 mV VIHCMR Input HIGH Voltage Common Mode Range (Note 3) 1.2 3.3 1.2 3.3 1.2 3.3 V IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current D D −150 −150 −150 −150 −150 −150 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. All values vary 1:1 with VCC. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. Table 5. LVTTL/LVCMOS OUTPUT DC CHARACTERISTICS VCC = 3.3 V, GND = 0.0 V, TA = −40°C to 85°C Symbol Characteristic Condition Min Typ Max Unit VOH Output HIGH Voltage IOH = −3.0 mA 2.4 V VOL Output LOW Voltage IOL = 24 mA 0.5 V IOS Output Short Circuit Current −180 −50 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. Table 6. AC CHARACTERISTICS VCC = 3.0 V to 3.6 V, GND = 0.0 V (Note 4) Symbol Characteristic −40 °C 25 °C 85 °C Unit Min Typ Max Min Typ Max Min Typ Max fmax Maximum Frequency (Figure 2) 275 350 275 350 275 350 MHz tPLH, tPHL Propagation Delay to Output Differential (Note 5) 1.2 1.2 1.5 1.5 1.8 1.8 1.2 1.1 1.5 1.5 1.8 1.8 1.3 1.1 1.7 1.5 2.4 1.8 ns tSK+ + tSK− − tSKPP Output−to−Output Skew++ Output−to−Output Skew−− Part−to−Part Skew (Note 6) 15 35 70 60 80 500 15 40 70 70 80 500 30 40 140 125 80 500 ps tJITTER Random Clock Jitter (RMS) (Figure 2) 5 10 5 10 5 10 ps VPP Input Voltage Swing (Differential Configuration) 150 800 1200 150 800 1200 150 800 1200 mV tr tf Output Rise/Fall Times (0.8 V − 2.0 V) Q, Q 330 600 900 330 600 900 330 650 900 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Measured with a 750 mV 50% duty−cycle clock source. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 3. 5. Reference (VCC = 3.3V ± 5%; GND = 0 V) 6. Skews are measured between outputs under identical conditions. |
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