SMF05T1

http://onsemi.com

2

Characteristic

Symbol

Value

Unit

200

W

Steady State Power -- 1 Diode (Note 2)

385

mW

Thermal Resistance Junction to Ambient

Above 25°C, Derate

325

3.1

°C/W

mW/°C

Maximum Junction Temperature

150

°C

Operating Junction and Storage Temperature Range

--55 to +150

°C

ESD Discharge

IEC61000--4--2, Air Discharge

IEC61000--4--2, Contact Discharge

30

30

kV

Lead Solder Temperature (10 seconds duration)

260

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS

Device

Breakdown Voltage

Leakage Current

(mA)

Capacitance

@0VBias

(pF)

Max

(V)

Max Clamping

Max Clamping

Min

Max

SMF05

6.0

7.2

5.0

90

1.25

1.0

9.5

12

12.5

1. Non--repetitive current per Figure 1. Derate per Figure 2.

Figure 1. Pulse Width

Figure 2. 8 × 20 ms Pulse Waveform

100

10

1

1

10

100

1000

t, TIME (ms)

1000

NOTE: Non--Repetitive Surge.

100

90

80

70

60

50

40

30

20

10

0

020

40

60

80

t, TIME (ms)

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms