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SMF05T1 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. SMF05T1
Description  Quad Array for ESD Protection
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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SMF05T1 Datasheet(HTML) 2 Page - ON Semiconductor

   
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SMF05T1
http://onsemi.com
2
MAXIMUM RATINGS (TA =25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 8 X 20 ms@TA ≤ 25°C(Note 1)
Ppk
200
W
Steady State Power -- 1 Diode (Note 2)
PD
385
mW
Thermal Resistance Junction to Ambient
Above 25°C, Derate
RθJA
325
3.1
°C/W
mW/°C
Maximum Junction Temperature
TJmax
150
°C
Operating Junction and Storage Temperature Range
TJ Tstg
--55 to +150
°C
ESD Discharge
IEC61000--4--2, Air Discharge
IEC61000--4--2, Contact Discharge
30
30
kV
Lead Solder Temperature (10 seconds duration)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
Device
Breakdown Voltage
VBR @ 1 mA (Volts)
Leakage Current
IR @VRWM =5V
(mA)
Capacitance
@0VBias
(pF)
Max
VF @IF = 200 mA
(V)
Max Clamping
Voltage (VC)
@IPP
Max Clamping
Voltage (VC)
@IPP
Min
Max
IPP (A)
VC (V)
IPP (A)
VC (V)
SMF05
6.0
7.2
5.0
90
1.25
1.0
9.5
12
12.5
1. Non--repetitive current per Figure 1. Derate per Figure 2.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR--4 board with min pad.
Figure 1. Pulse Width
Figure 2. 8 × 20 ms Pulse Waveform
100
10
1
1
10
100
1000
t, TIME (ms)
1000
NOTE: Non--Repetitive Surge.
100
90
80
70
60
50
40
30
20
10
0
020
40
60
80
t, TIME (ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @8 ms
HALF VALUE IRSM/2 @ 20 ms


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