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BY229F-800 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BY229F-800 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Rectifier diodes BY229F, BY229X series fast, soft-recovery FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 200 V/ 400 V/ 600 V/800 V • Fast switching • Soft recovery characteristic I F(AV) = 8 A • High thermal cycling performance • Isolated mounting tab I FSM ≤ 60 A t rr ≤ 135 ns GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies. The BY229F series is supplied in the conventional leaded SOD100 package. The BY229X series is supplied in the conventional leaded SOD113 package. PINNING SOD100 SOD113 PIN DESCRIPTION 1 cathode 2 anode tab isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BY229F- / BY229X- 200 400 600 800 V RSM Peak non-repetitive reverse - 200 400 600 800 V voltage V RRM Peak repetitive reverse voltage - 200 400 600 800 V V RWM Crest working reverse voltage - 150 300 500 600 V V R Continuous reverse voltage - 150 300 500 600 V I F(AV) Average forward current 1 square wave; δ = 0.5; - 8 A T hs ≤ 83 ˚C sinusoidal; a = 1.57; - 7 A T hs ≤ 90 ˚C I F(RMS) RMS forward current - 11 A I FRM Peak repetitive forward current t = 25 µs; δ = 0.5; - 16 A T hs ≤ 83 ˚C I FSM Peak non-repetitive forward t = 10 ms - 60 A current t = 8.3 ms - 66 A sinusoidal; T j = 150 ˚C prior to surge; with reapplied V RWM(max) I 2tI2t for fusing t = 10 ms - 18 A 2s T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C 1. Neglecting switching and reverse current losses. k a 12 12 case 12 case September 1998 1 Rev 1.200 |
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