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BY249 Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BY249
Description  Rectifier diodes general purpose
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BY249 Datasheet(HTML) 1 Page - NXP Semiconductors

  BY249 Datasheet HTML 1Page - NXP Semiconductors BY249 Datasheet HTML 2Page - NXP Semiconductors BY249 Datasheet HTML 3Page - NXP Semiconductors BY249 Datasheet HTML 4Page - NXP Semiconductors BY249 Datasheet HTML 5Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
BY249 series
general purpose
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
V
R = 300 V / 600 V / 800 V
• High thermal cycling performance
• Low thermal resistance
V
F ≤ 1.05 V
I
F(AV) = 7 A
I
FSM ≤ 60 A
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier diodes. The devices are
intended for low frequency power
1
cathode
rectifier applications.
2
anode
The BY249 series is supplied in the
conventional
leaded
SOD59
tab
cathode
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.UNIT
UNIT
BY249
-300
-600
-800
V
RSM
Peak non-repetitive reverse
-
300
600
800
V
voltage
V
RRM
Peak repetitive reverse
-
300
600
800
V
voltage
V
RWM
Crest working reverse voltage
-
200
500
700
V
V
R
Continuous reverse voltage
-
200
500
700
V
I
F(AV)
Average forward current
1
sinusoidal; a = 1.57; T
mb ≤ 131 ˚C
-
7
A
I
F(RMS)
RMS forward current
-
11
A
I
FRM
Peak repetitive forward
sinusoidal; a = 1.57;
-
60
A
current
I
FSM
Peak non-repetitive forward
t = 10 ms
-
60
A
current.
t = 8.3 ms
-
66
A
sinusoidal; T
j = 150 ˚C prior to
surge; with reapplied V
RWM(max)
I
2tI2t for fusing
t = 10 ms
-
18
A
2s
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction
-
150
˚C
temperature
k
a
12
1
tab
2
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300


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