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L6571A_0009 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. L6571A_0009
Description  HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6571A_0009 Datasheet(HTML) 3 Page - STMicroelectronics

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L6571A L6571B
PIN FUNCTION
ELECTRICAL CHARACTERISTCS (VS = 12V; VBOOT -VOUT = 12V; Tj = 25°C; unless otherwise specified.)
Pin
Description
1
VS
Supply input voltage with internal clamp [typ. 15.6V]
2
RF
Oscillator timing resistor pin.
A buffer set alternatively to VS and GND can provide current to the external resistor RF
connected between pin 2 and 3.
Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569/71 to
drive a full H-bridge)
3
CF
Oscillator timing capacitor pin.
A capacitor connected between this pin and GND fixes (together with RF) the oscillating
frequency
Alternatively an external logic signal can be applied to the pin to drive the IC.
4
GND
Ground
5
LVG
Low side driver output.
The output stage can deliver 170mA source and 270mA sink [typ.values].
6
OUT
Upper driver floating reference
7
HVG
High side driver output.
The output stage can deliver 170mA source and 270mA sink [typ.values].
8
BOOT
Bootstrap voltage supply.
It is the upper driver floating supply.
Symbol
Pin
Parameter
Test Condition
Min.
Typ.
Max.
Unit
VSUVP
1
VS Turn On Threshold
8.3
9
9.7
V
VSUVN
VS Turn Off Threshold
7.3
8
8.7
V
VSUVH
VS Hysteresis
0.7
1
1.3
V
VCL
VS Clamping Voltage
IS = 5mA
14.6
15.6
16.6
V
ISU
Start Up Current
VS <VSUVN
150
250
µA
Iq
Quiescent Current
VS >VSUVP
500
700
µA
IBOOTLK
8
Leakage Current BOOT pin vs
GND
VBOOT =580V
5
µA
IOUTLK
6
Leakage Current OUT pin vs
GND
VOUT =562V
5
µA
IHVG SO
7
High Side Driver Source Current
VHVG = 6V
110
175
mA
IHVG SI
High Side Driver Sink Current
VHVG = 6V
190
275
mA
ILVG SO
5
Low Side Driver Source Current
VLVG = 6V
110
175
mA
ILVG SI
Low Side Driver Sink Current
VLVG = 6V
190
275
mA
VRFON
2
RF High Level Output Voltage
IRF =1mA
VS -0.05
VS -0.2
V
VRF OFF
RF Low Level Output Voltage
IRF = -1mA
50
200
mV
VCFU
3
CF Upper Threshold
7.7
8
8.2
V
VCFL
CF Lower Threshold
3.80
4
4.3
V
td
Internal Dead Time
L6571A
L6571B
0.85
0.50
1.25
0.72
1.65
0.94
µs
µs


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