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DTA115EL-AL3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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DTA115EL-AL3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 2 page DTA115E PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 www.unisonic.com.tw QW-R220-016,A ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC -50 V Input Voltage VIN -40~+10 V IOUT -20 Output Current Ic(max) -100 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VIN(off) VCC= -5V, IOUT=-100μA -0.5 Input Voltage VIN(ON) VOUT= -0.3V,IOUT= -1mA -3 V Output Voltage VOUT(ON) IOUT= -5mA, IIN= -0.25 mA -0.1 -0.3 V Input Current IIN VIN= -5V -0.15 mA Output Current IOUT(off) VCC= -50V , VIN=0V -0.5 μA DC Current Gain GI VOUT= -5V,IOUT= -5mA 82 Input Resistance R1 70 100 130 kΩ Resistance Ratio R2/R1 0.8 1 1.2 Transition Frequency fT VCE= -10 V, IE= 5mA, f=100MHz * 250 MHz *Transition frequency of the device U T C assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all U T C products described or contained herein. U T C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably ex pected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. |
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